Threshold voltage and DIBL effect analysis and modeling for FD-SOI MOSFET with high k + SiO$_2$ gate
نویسندگان
چکیده
منابع مشابه
Modeling and Design of a Low-Voltage SOI Suspended-Gate MOSFET (SG-MOSFET) with a Metal-over-Gate Architecture
A novel MEMS device architecture: the SOI SGMOSFET, which combines a solid-state MOS transistor and a suspended metal membrane in a unique metal-over-gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversions) is developed and used to investigate main electrostatic characteristics in order to provide first-order design criteria for low-voltage oper...
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As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several investigations are going to reduce the ...
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The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET dev...
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ژورنال
عنوان ژورنال: SCIENTIA SINICA Informationis
سال: 2019
ISSN: 1674-7267
DOI: 10.1360/n112017-00200